Molecular Dynamics Simulation of Bauschinger Effect in Cu Nanowire with Different Crystallographic Orientation

Abstract

In this study, the Bauschringer Effect (BE) resulting from tension-compression deformation applied to nanowires obtained by placing Cu atoms in , and highly symmetric crystallographic directions was investigated using the Molecular Dynamics (MD) simulation method. The forces between atoms were determined from the gradient of the Embedded Atom Method (EAM) potential function, which includes many-body interactions. It was determined that there is an asymmetry between the stress-strain curves obtained as a result of the tension and compression deformation process applied to the model system. From this asymmetry, it was determined that the yield stress obtained in the drawing process for nanowire with crystallographic orientation was greater than the yield strain obtained as a result of the compression process. In contrast, the opposite was found for nanowires with crystallographic orientation and . In addition, after the yield strain value is exceeded as a result of the drawing process applied to the model nanowire system, compression deformation process was applied at different pre-strain values. The existence of the Bauschinger Effect (BE), which is expressed as the yield strength value as a result of forward loading corresponding to the tension operation, is smaller than the yield value obtained as a result of the compression process in which the loading is removed, was determined. To clarify the effect of BE on Cu nanowires with different crystallographic orientations, Bauschinger Stress parameter (BSP) and Bauschinger Parameter (BP) values were calculated.