Improving the optical and electrical properties of NiO/n-Si photodiode by Li dopant

Abstract

In this study, Li-doped NiO solution was produced using a sol-gel spin coating technique. The manufactured solution was deposited onto the n-Si substrate to obtain a homogeneous thin film that could be used for photodiode production. Next, we measured the morphological, electrical, and optical parameters of the manufactured photodiode. First, the morphological properties of the thin film were studied by atomic force microscopy (AFM). Using AFM analysis software, the roughness and grain size of the thin film were estimated as 8.2-10 and 227-239 nm respectively. The optical transparency and the band gap of the Li-doped NiO thin film were studied. The optical measurements of the thin film were taken using a Shimadzu UV-Vis-NIR 3600 spectrophotometer. The transmittance of the thin film was 83.6%, and the band gap was 3.57 eV. The current-voltage (I-V) characteristic of the photodiode was measured in the dark and under various intensities of illumination. We found that the current of the photodiode changed depending on the intensity of illumination. As the intensity of illumination increased, the current also increased, from 6.3 x 10(-7) to 3.36 x 10(-4) A. These data indicate that the photodiode is sensitive to illumination intensity and, therefore, could be used as an optical sensor. The barrier height and ideality factor of the photodiode were also determined using the thermionic emission model. The barrier height and ideality factor of the Al/n-Si/LiNiO/Au photodiode were 0.81 eV and 3.7 respectively. Also, the capacitance-voltage (C-V), the interface density (D-it), and the serial resistance of the photodiode were found to change with changing frequency. Taken together, these data show that the Li doping ratio improved the optical and electrical properties of NiO. Based on these findings, we propose that Li-doped NiO could be incorporated into optoelectronic devices, such as photodiodes and photosensors.