Series resistance controlling photosensor of Ag/DNA/p-Si/Al diode

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dc.contributor.authorGupta, R. K.
dc.contributor.authorAl-Ghamdi, A. A.
dc.contributor.authorAl-Hartomi, Omar
dc.contributor.authorHasar, H.
dc.contributor.authorEl-Tantawy, Farid
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:31:35Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractThe Ag/DNA/p-Si/Al Schottky barrier diode was fabricated using spin-coating technique. The electrical characterization of the diode was performed using current-voltage and capacitance-voltage-frequency measurements. The ideality factor and barrier height of the diode were found to be 2.26 and 0.72 eV, respectively. The photoresponse measurements indicate that the diode behaves as a photodiode. The alternative current (AC) measurements were performed in detail. The capacitance-voltage-frequency (C-V-f) measurements indicate that the capacitance of the diode depends on voltage and frequency. The observed decrease in the capacitance and increase in the conductance with increase in frequency were explained on the basis of interface states. The density of interface states of the diode is decreased with increasing frequency. It was observed that the series resistance of the diode is decreased with increasing light intensity and increased with decreasing frequency under constant light intensity. (C) 2012 Elsevier B.V. All rights reserved.
dc.description.sponsorshipUniversity of Tabuk [4/1433]
dc.description.sponsorshipThe present study is a result of an international collaboration program between University of Tabuk, Tabuk, Saudi Arabia and Firat University, Elazig, Turkey. The authors gratefully acknowledge the financial support from the University of Tabuk, Project number: 4/1433.
dc.identifier.doi10.1016/j.synthmet.2012.04.008
dc.identifier.endpage987
dc.identifier.issn0379-6779
dc.identifier.issue11.Ara
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.orcid0000-0001-8207-8669
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-84861012468
dc.identifier.scopusqualityQ1
dc.identifier.startpage981
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2012.04.008
dc.identifier.urihttps://hdl.handle.net/11508/56322
dc.identifier.volume162
dc.identifier.wosWOS:000306044800017
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectDNA
dc.subjectOrganic material
dc.subjectPhotoresponse
dc.subjectSchottky diode
dc.subjectIdeality factor
dc.titleSeries resistance controlling photosensor of Ag/DNA/p-Si/Al diode
dc.typeArticle

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