Europium-doped ruthenium oxide nanostructures: Hydrothermal synthesis, structural characteristics and dielectric performance

dc.contributor.authorMacit, Cevher Kursat
dc.contributor.authorGurgenc, Turan
dc.contributor.authorGurgenc, Ezgi
dc.contributor.authorBiryan, Fatih
dc.contributor.authorIlkilic, Cumali
dc.contributor.authorOzkan, Betul Cicek
dc.date.accessioned2026-08-12T17:27:25Z
dc.date.issued2025
dc.departmentFırat Üniversitesi
dc.description.abstractEu-doped RuO2 nanostructures with 1, 3, and 5 wt.% doping were synthesized via a hydrothermal method at 180 degrees C for 12 h followed by annealing at 450 degrees C. XRD confirmed the rutile tetragonal phase, with diffraction peak shifts toward higher 2 theta values reflecting lattice contraction from oxygen vacancy formation. The average crystallite size remained in the nanoregime (14-16 nm), ensuring structural stability. FE-SEM revealed a morphological transition from spherical to elongated grains with enhanced connectivity at higher Eu levels, while EDX mapping confirmed uniform Eu distribution. FT-IR and Raman spectra identified Eu-O vibrations, lattice strain, and defect-related modes, consistent with substitutional doping. XPS analysis confirmed the Eu3+ oxidation state and an increasing contribution from defect-related oxygen species. Dielectric testing demonstrated a marked increase in dielectric constant from 17.75 (pure RuO2) to 23.60, 33.07, and 43.73 at 1, 3, and 5 wt.% Eu, respectively, representing a similar to 146% improvement at the highest doping. Dielectric loss rose from 2.46 to 14.46 with Eu addition, while AC conductivity increased from 1.09 x 10(-8) S/cm (pure) to a maximum of 2.89 x 10(-8) S/cm at 3 wt.% Eu before decreasing to 1.46 x 10(-8) S/cm at 5 wt.% due to defect clustering. These findings show that controlled Eu doping effectively tailors oxygen vacancy concentration, defect dipole density, and interfacial polarization, enabling significant enhancement of dielectric performance and tunable conductivity. Consequently, Eu-modified RuO2 is a promising candidate for high-k dielectrics in capacitors, memory devices, and multifunctional optoelectronic systems. [GRAPHICS] .
dc.description.sponsorshipFirat University Scientific Research Projects Management Unit [TEKF.20.27, ADEP.25.63]
dc.description.sponsorshipFirat University Research Fund (FUBAP- TEKF.20.27 and ADEP.25.63).
dc.identifier.doi10.1007/s00339-025-09058-w
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue12
dc.identifier.orcid0000-0003-0466-7788
dc.identifier.orcid0000-0002-7678-2673
dc.identifier.scopus2-s2.0-105021078218
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-025-09058-w
dc.identifier.urihttps://hdl.handle.net/11508/55203
dc.identifier.volume131
dc.identifier.wosWOS:001608924500004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectNanomaterial
dc.subjectHydrothermal
dc.subjectRuthenium oxide
dc.subjectRare earth element
dc.subjectDielectric
dc.titleEuropium-doped ruthenium oxide nanostructures: Hydrothermal synthesis, structural characteristics and dielectric performance
dc.typeArticle

Dosyalar