Photovoltaic and phototransient interface states properties of nanocomposite Fe3O4-graphene/n-Si/Al photodiode

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dc.contributor.authorAlahmed, Z. A.
dc.contributor.authorPhan, D. -T.
dc.contributor.authorChung, G. -S.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T16:36:12Z
dc.date.issued2013
dc.departmentFırat Üniversitesi
dc.description.abstractA photodiode based on Fe3O4-graphene/n-Si/Al diode was fabricated. The electrical and capacitance properties of the diode were investigated by transient current and capacitance measurements. Ag/Fe3O4-graphene/n-Si photovoltaic device gives I-sc of 0.111 mA and V-oc of 375 mV under 1.5 A.M. The maximum electrical power P-max value of the device was found to be 7.567 mu V. This suggests that the studied photovoltaic device can be used as a microvoltage generator. The capacitance of the device increases with illumination. This indicates that the device exhibits a photocapacitance behavior. This behavior was analyzed by transient photocapacitance measurements. The transient interface states density plots of the diode were obtained. The photocapacitance mechanism was explained with the change in the interface states. (C) 2013 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipNPST Program by King Saud University [10-NAN1197-02]; Firat University Scientific Research Projects [FF.12.30]
dc.description.sponsorshipThis work is supported by NPST Program by King Saud University Project Number 10-NAN1197-02 and Firat University Scientific Research Projects Unit Project Number: FF.12.30.
dc.identifier.doi10.1016/j.spmi.2013.07.012
dc.identifier.endpage46
dc.identifier.issn0749-6036
dc.identifier.orcid0000-0002-1901-6243
dc.identifier.scopus2-s2.0-84883813513
dc.identifier.scopusqualityN/A
dc.identifier.startpage36
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2013.07.012
dc.identifier.urihttps://hdl.handle.net/11508/45213
dc.identifier.volume63
dc.identifier.wosWOS:000326552300005
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAcademic Press Ltd- Elsevier Science Ltd
dc.relation.ispartofSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectGraphene
dc.subjectPhotovoltaic device
dc.subjectDiode
dc.titlePhotovoltaic and phototransient interface states properties of nanocomposite Fe3O4-graphene/n-Si/Al photodiode
dc.typeArticle

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