Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:44:57Z
dc.date.issued2007
dc.departmentFırat Üniversitesi
dc.description.abstractAl/p-Si/copper phthalocyanine photovoltaic device has been fabricated and characterised by current-voltage and capacitance-voltage measurements. Electrical properties of the device were determined by current-voltage characterizations under dark and illumination conditions. The density distribution of the interface states of the photodiode was found to vary from 8.88 x 10(12) eV(-1)cm(-2) in E-ss-O. 54 eV to 4.51 X 10(12) eV(-1) cm(-2) in E-ss-0.61 eV. The device shows a photovoltaic behaviour with a maximum open circuit voltage Voc of 0.16V and short-circuits current I-sc of 0.45 mu A under 3500 lux light intensity. (C) 2007 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.solmat.2007.03.027
dc.identifier.endpage1186
dc.identifier.issn0927-0248
dc.identifier.issn1879-3398
dc.identifier.issue13
dc.identifier.scopus2-s2.0-34249787298
dc.identifier.scopusqualityQ1
dc.identifier.startpage1182
dc.identifier.urihttps://doi.org/10.1016/j.solmat.2007.03.027
dc.identifier.urihttps://hdl.handle.net/11508/60468
dc.identifier.volume91
dc.identifier.wosWOS:000248022300005
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofSolar Energy Materials and Solar Cells
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectphotodiode
dc.subjectorganic semiconductor
dc.subjectphthalocyanine
dc.titleElectronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier
dc.typeArticle

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