Controlling of semiconductor/metal junction barrier by 5,10,15,20- tetraphenyl-21H,23H-porphine ruthenium(II) carbonyl

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T16:13:40Z
dc.date.issued2007
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical characteristics of RuP/p-Si/Al junction barrier have been investigated by current-voltage and capacitance-voltage characteristics. A deviation in l-V characteristic of the diode is observed due to effect of series resistance and interfacial layer. RuP/p-Si/Al diode is a metal-interfacial layer-semiconductor type diode with calculated electronic parameters (ideality factor, series resistance and barrier height; n=1.95, Rs=6.25 k? and ?B=1.23 eV). The obtained barrier height and ideality factor values of RuP/p-Si/Al diode at the room temperature is significantly larger that that for the conventional Al/p-Si Schottky diode. It is evaluated that RuP organic layer modifies electronic properties of metal-semiconductor devices based on p-Si.
dc.identifier.endpage3654
dc.identifier.issn1454-4164
dc.identifier.issue11
dc.identifier.scopus2-s2.0-38549124602
dc.identifier.scopusqualityQ4
dc.identifier.startpage3651
dc.identifier.urihttps://hdl.handle.net/11508/43145
dc.identifier.volume9
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherNational Institute of Optoelectronics
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20260511
dc.subjectMetal-semiconductor contact; Organic semiconductor; Series resistance
dc.titleControlling of semiconductor/metal junction barrier by 5,10,15,20- tetraphenyl-21H,23H-porphine ruthenium(II) carbonyl
dc.typeConference Object

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