The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode

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dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorTataroglu, A.
dc.contributor.authorDere, Aysegul
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:38:32Z
dc.date.issued2023
dc.departmentFırat Üniversitesi
dc.description.abstractThe Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach and deposited on the p-type silicon wafer by the use of the sol-gel technique. Then, the CCTS based Al/Cu2CdSnS4 (CCTS)/p-Si/Al photodiode was produced. The prepared CCTS film was analyzed using various characterization methods such as energy-dispersive X-ray (EDX or EDS), scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectroscopy. Optoelectronic and electronic attributes of the generated photodiode were investigated under the solar light and frequency conditions. The obtained data from the current measurements based on illumination intensity showed that the generated diode exhibits a photovoltaic and photoconductive behavior. In addition, it is found that the conductance and capacitance features of the diode were quite sensitive to frequency. The obtained outcomes indicated that the produced structure could be used in optoelectronic technology, especially in photodiode and solar cell applications.
dc.description.sponsorshipFIRAT University Scientific Research Projects Management Unit [ADEP 2305]; King Khalid University under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia [RCAMS/KKU/p002-21]
dc.description.sponsorshipThe authors would like to acknowledge the support of FIRAT University Scientific Research Projects Management Unit for this research through ADEP 2305 and King Khalid University for this research through grant no. RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia.
dc.identifier.doi10.1007/s10854-023-11465-9
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue30
dc.identifier.scopus2-s2.0-85174571050
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s10854-023-11465-9
dc.identifier.urihttps://hdl.handle.net/11508/58466
dc.identifier.volume34
dc.identifier.wosWOS:001091023800002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectBarrier Height Modification
dc.subjectCu2Cdsns4 Thin-Films
dc.subjectCapacitance-Voltage
dc.subjectInterface Structure
dc.subjectTemperature
dc.subjectFrequency
dc.subjectTransport
dc.subjectNanostructure
dc.subjectMechanisms
dc.subjectDeposition
dc.titleThe structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode
dc.typeArticle

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