The effect of SiO2 dielectric layer on ultraviolet detecting properties of pentacene thin film transistor
| dc.contributor.author | Yakuphanoğlu, Fahrettin | |
| dc.contributor.author | Farooq, W. Aslam | |
| dc.date.accessioned | 2026-08-12T17:30:38Z | |
| dc.date.issued | 2011 | |
| dc.department | Fırat Üniversitesi | |
| dc.description.abstract | The pentacene thin film transistor was fabricated on a SiO2/Si substrate by thermal evaporated method at room temperature. Electrical characteristics of the pentacene transistor subjected to a UV light excitation at a wavelength of 365 nm were analyzed. A significant increase in the drain current of the pentacene thin film transistor under a UV excitation of 365 nm is observed with a maximum photosensitivity of 4.51 in the depletion regime. It is concluded that the pentacene thin film transistor can be used in UV photo-detecting devices. (C) 2010 Elsevier B.V. All rights reserved. | |
| dc.description.sponsorship | King Saud University [KSU-VPP-102]; Feyzi AKKAYA Scientific Activates Supporting Fund (FABED) | |
| dc.description.sponsorship | This work was supported by King Saud University under a grant number: KSU-VPP-102 and Feyzi AKKAYA Scientific Activates Supporting Fund (FABED). Author wishes to thank KSU and FABED for young Scientist grant. | |
| dc.identifier.doi | 10.1016/j.synthmet.2010.11.008 | |
| dc.identifier.endpage | 135 | |
| dc.identifier.issn | 0379-6779 | |
| dc.identifier.issue | 1.Şub | |
| dc.identifier.scopus | 2-s2.0-78650921516 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.startpage | 132 | |
| dc.identifier.uri | https://doi.org/10.1016/j.synthmet.2010.11.008 | |
| dc.identifier.uri | https://hdl.handle.net/11508/56162 | |
| dc.identifier.volume | 161 | |
| dc.identifier.wos | WOS:000287383800019 | |
| dc.identifier.wosquality | Q2 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Elsevier Science Sa | |
| dc.relation.ispartof | Synthetic Metals | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WoS_20260511 | |
| dc.subject | Thin film transistor | |
| dc.subject | Photoresponse | |
| dc.subject | Field effect mobility | |
| dc.title | The effect of SiO2 dielectric layer on ultraviolet detecting properties of pentacene thin film transistor | |
| dc.type | Article |
