Electrical and Photoresponse Properties of p-CuGaO2-on-p-Si/Al Photodiode

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dc.contributor.authorElsayed, I. A.
dc.contributor.authorFahmy, T.
dc.contributor.authorEl-Tantawy, Farid
dc.contributor.authorFarooq, W. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:04:20Z
dc.date.issued2014
dc.departmentFırat Üniversitesi
dc.description.abstractWe synthesized CuGaO2 film by sol gel method to prepare a photodiode of p-Si/CuGaO2. The structural properties of the CuGaO2 film were investigated using atomic force microscope (AFM). The optical band gap of the CuGaO2 film was found to be 3.64 eV. The photoresponse characteristics indicate that the diode exhibits a photoconducting behavior. The photosensitivity value under 100 rriW/cm(2) was found to be of 6.80 x 10(2). The ideality factor and barrier height of the diode were obtained to be 2.02 +/- 0.06 and 0.60 +/- 0.4 eV, respectively. The interface states of the diode were determined by conductance technique and was found to be similar to 10(15) eV(-1)cm(-1). It is evaluated that p-CuGaO2-on-p-Si/Al photodiode can be used for optoelectronics applications.
dc.description.sponsorshipSalaman Bin Abdulaziz University KSA; Deanship of Scientific Research; Deanship of Scientific Research in Salman Bin Abdul-Aziz University, Saudi Arabia [973/01/2014]
dc.description.sponsorshipThe authors would like to thank Salaman Bin Abdulaziz University KSA and Deanship of Scientific Research for their supporting. The work is Supported by the Deanship of Scientific Research in Salman Bin Abdul-Aziz University, Saudi Arabia under Grant No. 973/01/2014.
dc.identifier.doi10.1166/jno.2014.1637
dc.identifier.endpage589
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue5
dc.identifier.orcid0000-0003-3668-6035
dc.identifier.scopus2-s2.0-84923171169
dc.identifier.scopusqualityN/A
dc.identifier.startpage584
dc.identifier.urihttps://doi.org/10.1166/jno.2014.1637
dc.identifier.urihttps://hdl.handle.net/11508/48657
dc.identifier.volume9
dc.identifier.wosWOS:000352332300003
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Scientific Publishers
dc.relation.ispartofJournal of Nanoelectronics and Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectCuGaO2 Film
dc.subjectPhotodiode
dc.subjectSol-Gel
dc.titleElectrical and Photoresponse Properties of p-CuGaO2-on-p-Si/Al Photodiode
dc.typeArticle

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