New type of Schottky diode-based Cu-Al-Mn-Cr shape memory material films

dc.contributor.authorCanbay, C. Aksu
dc.contributor.authorDere, A.
dc.contributor.authorMensah-Darkwa, Kwadwo
dc.contributor.authorAl-Ghamdi, Ahmed
dc.contributor.authorGenc, Z. Karagoz
dc.contributor.authorGupta, R. K.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:58Z
dc.date.issued2016
dc.departmentFırat Üniversitesi
dc.description.abstractCr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.
dc.description.sponsorshipScientific Research Projects Unit of Adiyaman University [MUFBAP/2014-0006]
dc.description.sponsorshipThis study was financially supported by Scientific Research Projects Unit of Adiyaman University under project number: MUFBAP/2014-0006.
dc.identifier.doi10.1007/s00339-016-0208-3
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue7
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.orcid0000-0002-7070-1967
dc.identifier.scopus2-s2.0-84980316474
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-016-0208-3
dc.identifier.urihttps://hdl.handle.net/11508/56841
dc.identifier.volume122
dc.identifier.wosWOS:000379002100083
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectMartensitic-Transformation
dc.subjectBarrier Diodes
dc.subjectThermal-Stability
dc.subjectMicrostructure
dc.subjectCapacitance
dc.subjectAlloy
dc.titleNew type of Schottky diode-based Cu-Al-Mn-Cr shape memory material films
dc.typeArticle

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