Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

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dc.contributor.authorKarteri, Ibrahim
dc.contributor.authorKaratas, Sukru
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:48:21Z
dc.date.issued2014
dc.departmentFırat Üniversitesi
dc.description9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEY
dc.description.abstractWe have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV-vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I-on/I-off of GO-TFT were found to be 0.105 cm(2) V-1 s(-1), -8.7V, 4.03 V/decade and 10, respectively. (C) 2014 Elsevier B.V. All rights reserved.
dc.description.sponsorshipKahramanmaras Sutcu Imam University [2012/2-7D]; National Research Fellowship Programme [TUBITAK-2233]
dc.description.sponsorshipWe would like to thank Kahramanmaras Sutcu Imam University for financial support of the research program. (Project No:2012/2-7D). This study also was partially supported by TUBITAK-2233 National Research Fellowship Programme.
dc.identifier.doi10.1016/j.apsusc.2014.01.013
dc.identifier.endpage78
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.orcid0000-0003-1668-7866
dc.identifier.orcid0000-0001-8913-6753
dc.identifier.scopus2-s2.0-84909957177
dc.identifier.scopusqualityQ1
dc.identifier.startpage74
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2014.01.013
dc.identifier.urihttps://hdl.handle.net/11508/61396
dc.identifier.volume318
dc.identifier.wosWOS:000344380500014
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofApplied Surface Science
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectGraphene oxide
dc.subjectModified Hummers method
dc.subjectThin film transistor
dc.titleElectrical characterization of graphene oxide and organic dielectric layers based on thin film transistor
dc.typeConference Object

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