Machine learning-enhanced Lambert W modeling of TiO2 nanowire/Al-doped CdS QDs photovoltaic cells

dc.contributor.authorYahyaoui, Nejmeddine
dc.contributor.authorHjiri, Mokhtar
dc.contributor.authorMansouri, Salaheddine
dc.contributor.authorMustapha, Nazir
dc.contributor.authorFarooq, Wazirzada Aslam
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:27:06Z
dc.date.issued2025
dc.departmentFırat Üniversitesi
dc.description.abstractThis work investigates and compares the performance of photovoltaic (PV) titanium dioxide (TiO2) nanowire/aluminum (Al)-doped cadmium sulfide (CdS) with TiO2/CdS quantum dots (QDs) non-doped based PV-cells, where the TiO2 is used as a photoanode. The parameters (power and capacitance versus voltage, and conductance) of TiO2 nanowire/Al-doped CdS were examined. The TiO2 nanowire/Al-doped CdS enhanced the current density in the PV-cells. The TiO2 nanowire promotes electron transfer to the CdS, while adding an aluminum dopant can generate more charge, increasing the electron-hole pair density by absorbing white light. The experimental relationships between current-power densities versus voltage for the PV-cells were developed using the Lambert function for modeling and improved by machine learning. This study presents the application of artificial neural networks (ANNs) for predicting the current-voltage (I-V) characteristics of photovoltaic (PV) cells. The series and shunt resistances of the TiO2 nanowire/Al-doped CdS and TiO2/CdS quantum dots (QDs) based photovoltaic cells were determined using the Lambert equation. The results indicate that the TiO2 nanowire/Al-doped CdS configuration reduced both series and shunt resistances, contributing to increased current output compared to the TiO2/CdS QDs-based cells.
dc.description.sponsorshipDeanship of Scientific Research at Imam Mohammad Ibn Saud Islamic University (IMSIU) [IMSIU-DDRSP2502]
dc.description.sponsorshipThis research was funded by the Deanship of Scientific Research at Imam Mohammad Ibn Saud Islamic University (IMSIU) under grant number IMSIU-DDRSP2502.
dc.identifier.doi10.1007/s10853-025-11292-9
dc.identifier.endpage14637
dc.identifier.issn0022-2461
dc.identifier.issn1573-4803
dc.identifier.issue33
dc.identifier.orcid0009-0003-0588-9048
dc.identifier.orcid0000-0001-5394-3174
dc.identifier.scopus2-s2.0-105012890424
dc.identifier.scopusqualityQ1
dc.identifier.startpage14621
dc.identifier.urihttps://doi.org/10.1007/s10853-025-11292-9
dc.identifier.urihttps://hdl.handle.net/11508/55066
dc.identifier.volume60
dc.identifier.wosWOS:001546103100001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectSchottky-Barrier Diodes
dc.subjectC-V Characteristics
dc.subjectThin-Films
dc.subjectNegative Capacitance
dc.subjectDeposited Cds
dc.subjectGrowth
dc.subjectZno
dc.subjectOptimization
dc.subjectTemperature
dc.subjectDiffusion
dc.titleMachine learning-enhanced Lambert W modeling of TiO2 nanowire/Al-doped CdS QDs photovoltaic cells
dc.typeArticle

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