Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

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dc.contributor.authorOkur, Salih
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorOzsoz, Mehmet
dc.contributor.authorKadayifcilar, Pinar Kara
dc.date.accessioned2026-08-12T17:30:17Z
dc.date.issued2009
dc.departmentFırat Üniversitesi
dc.description.abstractThe effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes. (C) 2009 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTurkish State Planning Organization (DPT) [DPT2003K120390]
dc.description.sponsorshipThis study was financially supported by Turkish State Planning Organization (DPT) with the research project number DPT2003K120390. Dr. Ritchie Eanes is acknowledged for his technical and grammatical proof reading suggestions.
dc.identifier.doi10.1016/j.mee.2009.04.017
dc.identifier.endpage2311
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue11
dc.identifier.orcid0000-0003-4037-3445
dc.identifier.scopus2-s2.0-69549111056
dc.identifier.scopusqualityQ2
dc.identifier.startpage2305
dc.identifier.urihttps://doi.org/10.1016/j.mee.2009.04.017
dc.identifier.urihttps://hdl.handle.net/11508/56040
dc.identifier.volume86
dc.identifier.wosWOS:000271363900031
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectOrganic/inorganic junction
dc.subjectDNA
dc.subjectIdeality factor
dc.titleElectrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures
dc.typeArticle

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