Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators

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dc.contributor.authorKarteri, Ibrahim
dc.contributor.authorKaratas, Sukru
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:44Z
dc.date.issued2016
dc.departmentFırat Üniversitesi
dc.description.abstractIn this paper, the photoresponse properties are investigated for the pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide (GO) bilayer insulators. The GO is synthesized by a modified Hummers method. It is determined that the electrical characteristics and photosensing parameters of the thin film transistor under dark and white light illuminations. The mobility A mu value (3.752 x 10(-1) cm(2)/Vs) of the thin film transistor under dark is lower than that of the value (4.557 x 10(-1) cm(2)/Vs) under 100 mW/cm(2) illumination. The interface trap density of the transistor is reduced with the rise various illuminations. The photoresponse of the thin film transistor with dioxide/GO bilayer insulators in the on state is lower than that of the thin film transistor in the off state. The photoresponse characteristics indicate that the pentacene thin film transistor with solution-processed silicon dioxide/GO bilayer insulators exhibits a phototransistor characteristic.
dc.description.sponsorshipKahramanmaras, Sutcu Imam University [2012/2-7D]; [TUBITAK-2233]; [TUBITAK-2211-C]
dc.description.sponsorshipWe would like to thank Kahramanmaras, Sutcu Imam University for financial support of the research program. (Project No: 2012/2-7D). This study also was partially supported by TUBITAK-2233 National Research Fellowship Programme and TUBITAK-2211-C Fellowship Programme.
dc.identifier.doi10.1007/s10854-016-4426-4
dc.identifier.endpage5293
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue5
dc.identifier.orcid0000-0001-8913-6753
dc.identifier.scopus2-s2.0-84957567273
dc.identifier.scopusqualityQ2
dc.identifier.startpage5284
dc.identifier.urihttps://doi.org/10.1007/s10854-016-4426-4
dc.identifier.urihttps://hdl.handle.net/11508/56755
dc.identifier.volume27
dc.identifier.wosWOS:000373742500147
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectField-Effect Transistors
dc.subjectGraphene-Oxide
dc.subjectDielectric Layer
dc.subjectPerformance
dc.subjectMobility
dc.titlePhotosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
dc.typeArticle

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